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GlobalFoundries GF180MCU PDK 5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)
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    • Versioning Information
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          • 1.0 Low Voltage Devices (3.3V)
          • 2.0 Medium Voltage Devices (6V)
          • 3.0 Medium Voltage Devices (5V)
          • 4.0 Native Vt transistor (6V)
            • 5.1 Sheet Resistance
            • 5.2 Contact Resistance
            • 5.3 Gate oxide capacitance
            • 5.4 Oxide Breakdown Voltage
            • 5.5 Junction Breakdown Voltage
            • 5.6 Parasitic Capacitance
            • 5.7 Temperature Coefficient
            • 5.8 Vertical BJT Transistors
          • 6.0 Optional Passive Elements
          • 7.0 SAB Devices
          • 8.0 High Voltage LDMOS Transistor (10.0V)
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    5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP)¶

    • 5.1 Sheet Resistance
    • 5.2 Contact Resistance
    • 5.3 Gate oxide capacitance
    • 5.4 Oxide Breakdown Voltage
    • 5.5 Junction Breakdown Voltage
    • 5.6 Parasitic Capacitance
    • 5.7 Temperature Coefficient
    • 5.8 Vertical BJT Transistors
    Previous 4.0 Native Vt transistor (6V)
    Next 5.1 Sheet Resistance
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