1.5.1 MOSFET Instance parameters¶
The MOSFET instance parameters shall be used in the netlist are described below with their default values: -
Parameter  | 
Description  | 
w  | 
Device width in meter  | 
l  | 
Device length in meter  | 
nf  | 
Number of PC (gate) fingers  | 
as  | 
Source diffusion area in meter^2  | 
ad  | 
Drain diffusion area in meter^2  | 
ps  | 
Source diffusion perimeter in meter  | 
pd  | 
Drain diffusion perimeter in meter  | 
nrs  | 
Number of squares in source  | 
nrd  | 
Number of squares in drain  | 
1.5.1.1 LV NMOS (3.3V) and LV PMOS (3.3V) & NMOS SAB (3.3V) and PMOS SAB (3.3V)¶
Model Name & (BSIM Version)  | 
Parameter Value  | 
W  | 
L  | 
nf  | 
as  | 
ad  | 
ps  | 
pd  | 
nrs  | 
nrd  | 
dtemp  | 
nmos_3p3 (BSIM 4.5)  | 
Min  | 
0.22  | 
0.28  | 
1  | 
|||||||
Max  | 
100  | 
50  | 
|||||||||
Default  | 
0  | 
0  | 
1  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
|
pmos_3p3 (BSIM 4.5)  | 
Min  | 
0.22  | 
0.28  | 
1  | 
|||||||
Max  | 
50  | 
100  | 
|||||||||
Default  | 
0  | 
0  | 
1  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
1.5.1.2 MV NMOS (5V/6V), MV PMOS (5V/6V), NMOS SAB (5V/6V), PMOS SAB (5V/6V) and native NMOS (6V)¶
Model Name & (BSIM Version)  | 
Parameter Value  | 
W  | 
L  | 
nf  | 
as  | 
ad  | 
ps  | 
pd  | 
nrs  | 
nrd  | 
dtemp  | 
nmos_6p0 (BSIM 4.5)  | 
Min  | 
0.3  | 
0.6  | 
1  | 
|||||||
Max  | 
100  | 
50  | 
|||||||||
Default  | 
0  | 
0  | 
1  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
|
pmos_6p0 (BSIM 4.5)  | 
Min  | 
0.3  | 
0.5  | 
1  | 
|||||||
Max  | 
100  | 
50  | 
|||||||||
Default  | 
0  | 
0  | 
1  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
|
nmos_6p0_nat (BSIM 4.6)  | 
Min  | 
0.8  | 
1.8  | 
1  | 
|||||||
Max  | 
100  | 
50  | 
|||||||||
Default  | 
0  | 
0  | 
1  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  | 
0  |