8.0 Model to Hardware Correlation

• 8.1 MOSFETs
  • 8.1.1 nmos_3p3 (3.3V)
    • 8.1.1.1 CV - Characteristics
    • 8.1.1.2 IV - Characteristics
    • 8.1.1.3 I/f Noise - Characteristics
  • 8.1.2 pmos_3p3 (3.3V)
    • 8.1.2.1 CV - Characteristics
    • 8.1.2.2 IV - Characteristics
    • 8.1.2.3 I/f Noise - Characteristics
  • 8.1.3 nmos_6p0 (6.0V)
    • 8.1.3.1 CV - Characteristics
    • 8.1.3.2 IV - Characteristics
    • 8.1.3.3 I/f Noise - Characteristics
  • 8.1.4 pmos_6p0 (6.0V)
    • 8.1.4.1 CV - Characteristics
    • 8.1.4.2 IV - Characteristics
    • 8.1.4.3 I/f Noise - Characteristics
  • 8.1.5 nmos_6p0_nat (6.0V)
    • 8.1.5.1 IV - Characteristics
    • 8.1.5.2 I/f Noise - Characteristics
• 8.2 BJTs
  • 8.2.1 Vertical PNP
    • 8.2.1.1 VPNP-Emitter Size 10um x 10um
    • 8.2.1.2 VPNP-Emitter Size 5um x 5um
    • 8.2.1.3 VPNP-Emitter Size 0.42um x 10um
    • 8.2.1.4 VPNP-Emitter Size 0.42um x 5um
    • 8.2.1.5 VNPN-Emitter Size 10um x 10um
    • 8.2.1.6 VNPN-Emitter Size 5um x 5um
    • 8.2.1.7 VNPN-Emitter Size 0.54um x 16um
    • 8.2.1.8 VNPN-Emitter Size 0.54um x 8um
    • 8.2.1.9 VNPN-Emitter Size 0.54um x 4um
    • 8.2.1.10 VNPN-Emitter Size 0.54um x 2um
• 8.3 Diodes
  • 8.3.1 Schottky Diode