2.5 Model vs. EP Nominal Target¶
In the following sections, the comparison of the key device parameters between the models and EP targets (YI-141-EP059) are listed for each device. The values are for 25C unless specified otherwise.
The measured and simulated results are obtained using the following bias conditions: Idsat @ Vbs = 0 and Vds = Vgs = Vdd (NMOS) / -Vdd (PMOS)
where
Vdd = 3.3V for nmos_3p3
Vdd =-3.3V for pmos_3p3
Vdd = 6V for nmos_6p0
Vdd =-6V for pmos_6p0
Vdd = 6V for nmos_6p0_nat
Note
Vth0 is the measured or simulated threshold voltage obtained using the max Gm method at Vd = 0.05V. For 6.0V native NMOS, Vth0 is measured and simulated at Vd=0.1V. Vth1 is the simulated threshold voltage obtained using the BSIM equation. These two values may have a difference.
2.5.1 nmos_3p3 and pmos_3p3 (3.3V)¶
EP Specification |
Measurement |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vth0 (V) |
Idsat (uA/um) |
Vth0 (V) |
nmos_3p3 (10/0.28) |
slow |
430 |
0.73 |
- |
- |
typical |
510 |
0.63 |
508 |
0.644 |
|
fast |
590 |
0.53 |
- |
- |
|
pmos_3p3 (10/0.28) |
slow |
-210 |
-0.85 |
- |
- |
typical |
-250 |
-0.73 |
-254.1 |
-0.733 |
|
fast |
-290 |
-0.61 |
- |
- |
2.5.2 NMOS 3p3 SAB PMOS 3p3 SAB¶
EP Specification |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vth0 (V) |
Idlin (uA/um) |
nmos_3p3_sab * (10/0.28) |
slow |
426 |
0.73 |
52 |
typical |
505 |
0.63 |
57 |
|
fast |
586 |
0.53 |
63 |
|
pmos_3p3_sab (10/0.28) |
slow |
-206 |
-0.84 |
-18 |
typical |
-245 |
-0.72 |
-20 |
|
fast |
-286 |
-0.6 |
-23 |
Note
nmos_3p3_sab SAB Length on Drain side SAB DOP: 1.78um , Source Side SAB SOP: 0.48um
pmos_3p3_sab SAB Length on Drain side SAB DOP: 1.78um, Source Side SAB SOP: 0.48um
2.5.3 nmos_6p0 and pmos_6p0 (6V)¶
EP Specification |
Measurement |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vth0 (V) |
Idsat (uA/um) |
Vth0 (V) |
nmos_6p0 (10/0.7) |
slow |
480 |
0.85 |
- |
- |
typical |
570 |
0.73 |
579.6 |
0.738 |
|
fast |
660 |
0.61 |
- |
- |
|
nmos_6p0_nat (10/1.8) |
slow |
430 |
0.08 |
- |
- |
typical |
535 |
-0.12 |
543 |
-0.12 |
|
fast |
640 |
-0.32 |
- |
- |
|
pmos_6p0 (10/0.55) |
slow |
-240 |
-0.98 |
- |
- |
typical |
-290 |
-0.85 |
-297.4 |
-0.849 |
|
fast |
-340 |
-0.72 |
- |
- |
Note
nmos_6p0_sab Length of SAB on Drain side : 3.78um, Length of SAB on Source side: 0.28um
pmos_6p0_sab Length of SAB on Drain side : 2.78um, Length of SAB on Source side: 0.28um
2.5.4 nmos_6p0 and pmos_6p0 (5V)¶
EP Specification |
Measurement |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vth0 (V) |
Idsat (uA/um) |
Vth0 (V) |
nmos_6p0 (10/0.6) |
slow |
400 |
0.82 |
- |
- |
typical |
500 |
0.7 |
|||
fast |
600 |
0.58 |
- |
- |
|
pmos_6p0 (10/0.5) |
slow |
-200 |
-0.96 |
- |
- |
typical |
-240 |
-0.83 |
|||
fast |
-280 |
-0.7 |
- |
- |
EP Specification |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vth0 (V) |
Idlin (uA/um) |
nmos_6p0_sab (10/0.6) |
Slow |
398 |
0.84 |
39 |
typical |
498 |
0.72 |
46 |
|
fast |
598 |
0.58 |
53 |
|
pmos_6p0_sab (10/0.5) |
slow |
-187 |
-0.97 |
-12 |
typical |
-233 |
-0.84 |
-14 |
|
fast |
-280 |
-0.71 |
-17 |