14.5.5 ESD Performance from 5V/6V NMOS transistor¶
ESD Performance from 5V/6V NMOS transistor is summarized in following table. The TLP data for 5V/6V grounded gate NMOS without ESD implant is showed in below.
ESD Parameter |
Parameter Value (without ESD implant) |
Avalanche Breakdown Voltage (Vt1) |
~10.7V |
Snapback Holding voltage (Vsp) |
~6.2V TLP Current (A) |
Second Breakdown Current (It2) |
~7mA/um |
Second Breakdown Voltage (Vt2) |
~8V |
